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| Ordering number : ENA0536 VEC2819 SANYO Semiconductors DATA SHEET VEC2819 Features * * MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications DC / DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance * Ultrahigh-speed switching. * 1.8V drive. [SBD] * Low switching noise. * Low leakage current and high reliability due to planar structure. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage VRRM VRSM 30 30 V V VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1200mm20.8mm) 1unit --20 10 --3.5 --14 1.0 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : CT Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13107PE TI IM TC-00000472 No. A0536-1/6 VEC2819 Continued from preceding page. Parameter Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol IO IFSM Tj Tstg 50Hz sine wave, 1 cycle Conditions Ratings 2 10 --55 to +125 --55 to +125 Unit A A C C Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=200A IF=1A IF=2A VR=15V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 30 0.4 0.45 75 20 0.45 0.5 30 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-2A ID=--2A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.3A, VGS=-1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4.5V, ID=--3.5A VDS=--10V, VGS=-4.5V, ID=--3.5A VDS=--10V, VGS=-4.5V, ID=--3.5A IS=--3.5A, VGS=0V --20 --1 10 --0.4 3.5 5.8 55 77 112 680 115 80 12 57 68 58 8.7 1.5 1.8 --0.83 --1.2 72 108 168 --1.4 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7012-005 0.25 0.3 0.15 Electrical Connection 8 7 6 5 8 7 65 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 1 2 3 4 2.8 2.3 0.25 1 2 2.9 3 0.65 4 Top view 0.75 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 0.07 No. A0536-2/6 VEC2819 Switching Time Test Circuit [MOSFET] VIN 0V --4.5V VIN ID= --2A RL=5 50 10s --5V 100 10 trr Test Circuit [SBD] VDD= --10V Duty10% 100mA D PW=10s D.C.1% VOUT G 100mA trr VEC2819 P.G 50 S --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 --0.1 --0.2 --0.3 ID -- VDS --3. 0 --2 V .5V --3. 5 --2.0V [MOSFET] --7 ID -- VGS VDS= --10V [MOSFET] V Drain Current, ID -- A --4.0 V V --1.8 Drain Current, ID -- A --6 --5 --4.5 V --4 --3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 25 C --1.6 --1.8 --1 Ta = 75 --2 --25 C C VGS= --1.5V 10mA --2.0 160 IT11954 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS [MOSFET] 160 IT06417 Gate-to-Source Voltage, VGS -- V RDS(on) -- Tc [MOSFET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 100 Static Drain-to-Source On-State Resistance, RDS(on) -- m 140 120 --0 I D= . = --1 , VGS 3A .8V ID= --0.3A 80 60 40 20 0 0 --1 --2 --2.0A 100 80 -I D= 1.0A , 5V --2. S= VG 60 --2 I D= = --4 VGS .0A, .5V 40 20 --60 --3 --4 --5 --6 --7 --8 --9 --10 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT11827 Case Temperature, Tc -- C IT11828 No. A0536-3/6 VEC2819 3 yfs -- ID [MOSFET] VDS= --10V Forward Transfer Admittance, yfs -- S 2 --10 7 5 3 2 IS -- VSD [MOSFET] VGS=0V 7 5 3 2 C --25 Ta= C 25 C 75 --0.1 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 --10 IT06420 7 --0.01 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --0.001 --0.2 Drain Current, ID -- A 5 3 SW Time -- ID [MOSFET] VDD= --10V VGS= --4.5V 2 IT06421 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] Ta= 75 C 25 C --25 C 10 Source Current, IS -- A --1.0 7 5 3 2 f=1MHz Switching Time, SW Time -- ns 2 1000 100 7 5 3 2 td(off) tf Ciss, Coss, Crss -- pF 7 5 3 2 Ciss tr td(on) Coss 100 7 5 3 Crss 10 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 Drain Current, ID -- A --4.5 --4.0 --3.5 IT06422 VGS -- Qg [MOSFET] 3 2 --10 7 5 Drain-to-Source Voltage, VDS -- V IT06423 ASO [MOSFET] Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --3A Drain Current, ID -- A IDP= --14A ID= --3.5A PW10s --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 2 4 6 8 10 IT06424 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 10 0 s 10m 1ms s 10 0m DC s op era tio Operation in this area is limited by RDS(on). n --0.01 --0.1 Ta=25C Single pulse Mounted on a ceramic board (1200mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Total Gate Charge, Qg -- nC 1.2 Drain-to-Source Voltage, VDS -- V IT11783 PD -- Ta M ou nt ed on a [MOSFET] Allowable Power Dissipation, PD -- W 1.0 0.8 0.6 ce ra m ic bo ar d 0.4 0.2 (1 20 0m m2 0.8 m m )1 un it 100 120 140 160 IT11784 0 0 20 40 60 80 Ambient Temperature, Ta -- C No. A0536-4/6 VEC2819 7 5 3 2 IF -- VF [SBD] 100 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 IR -- VR Ta=125C 100C 75C 50C 25C 0C [SBD] 10 Reverse Current, IR -- mA Forward Current, IF -- A 1.0 7 5 3 2 1.0 0.1 0.01 5C 100 C 75 C 50 C 25 C 0C --25 C Ta= 12 0.1 7 5 3 2 0.01 0 0.001 --25C 0.0001 0.00001 0.1 0.2 0.3 0.4 0.5 0.6 IT08588 0 5 10 15 20 25 30 35 IT08589 Forward Voltage, VF -- V 7 5 Average Forward Power Dissipation, PF(AV) -- W C -- VR Reverse Voltage, VR -- V 1.4 [SBD] PF(AV) -- IO [SBD] (2)(4)(3) Rectangular wave Interterminal Capacitance, C -- pF 1.2 360 (1) 3 2 1.0 Sine wave 0.8 180 0.6 360 100 7 5 0.4 3 2 0.1 0.2 0 0 0.5 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 1.0 1.5 2.0 2.5 IT08591 2 3 5 7 1.0 2 3 5 7 10 2 3 57 IT08590 Reverse Voltage, VR -- V 14 Average Output Current, IO -- A IFSM -- t IS [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 12 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00435 No. A0536-5/6 VEC2819 Note on usage : Since the VEC2819 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2007. Specifications and information herein are subject to change without notice. PS No. A0536-6/6 |
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